Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO 2 as gate insulator

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 3079-3083

  Lin, Wen Kai ^a   Liu, Kou Chen ^b   Chang, Shu Tong ^a   Li, Chi Shiau ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

HfO 2; High ; IZO; Oxide semiconductor; Room temperature; TFT

Indexed keywords

HFO 2; IZO; OXIDE SEMICONDUCTOR; ROOM TEMPERATURE; TFT;

ARGON; FABRICATION; GATE DIELECTRICS; HAFNIUM; HAFNIUM OXIDES; INDIUM; MAGNETRON SPUTTERING; MAGNETRONS; OPTOELECTRONIC DEVICES; OXIDE FILMS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM; THIN FILM TRANSISTORS; THIN FILMS; TIN; TRANSISTORS; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 84856395169     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.039     Document Type: Article

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