Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique

IEEE Photonics Technology Letters

Volumn 24, Issue 3, 2012, Pages 218-220

  Nunna, Kalyan Chakravarthy ^a,b   Tan, Siew Li ^c   Reyner, Charles J ^d   Marshall, Andrew Robert Julian ^e   Liang, Baolai ^a   Jallipalli, Anitha ^d   David, John P R ^c   Huffaker, Diana L ^a,d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Radio Frequency Micro Devices Inc   (United States)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d University of California   (United States)

^e LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

2 m photodetectors; GaInAsSb; GaSb on GaAs; Infrared photodetectors; InGaAsSb; Interfacial misfit arrays; PIN photodiodes; Short wave infrared

Indexed keywords

GAAS; GAINASSB; INFRARED PHOTODETECTORS; INGAASSB; INTERFACIAL MISFIT; PIN PHOTODIODE; SHORT WAVE INFRARED;

DETECTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; INFRARED DETECTORS; INFRARED RADIATION; PHOTODIODES; SEMICONDUCTING GALLIUM;

SUBSTRATES;

EID: 84856202798     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2177253     Document Type: Article

References (11)

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