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Volumn 2, Issue 11, 2009, Pages

Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

(11) Rotter, Thomas J a,b Tatebayashi, Jun a Senanayake, Pradeep a Balakrishnan, Ganesh b Rattunde, Marcel c Wagner, Joachim c Hader, Jörg d Moloney, Jerome V d Koch, Stephan W e Dawson, L Ralph b Huffaker, Diana L a

a CALIFORNIA NANOSYSTEMS INSTITUTE (United States)

b UNIVERSITY OF NEW MEXICO (United States)

c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

d UNIVERSITY OF ARIZONA (United States)

e PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY SURFACE-EMITTING LASERS; CONTINUOUS WAVES; GAAS; GAAS SUBSTRATES; GROWTH MODES; INTERFACIAL MISFIT; LATTICE-MISMATCHED; LOW-DISLOCATION DENSITY; MAXIMUM OUTPUT POWER; MISFIT DISLOCATIONS; PERIODIC ARRAYS; ROOM-TEMPERATURE OPERATION; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

CONTINUOUS WAVE LASERS; FIBER LASERS; GALLIUM ARSENIDE; MONOLAYERS; OPTICALLY PUMPED LASERS; PUMPING (LASER); SEMICONDUCTING GALLIUM; SURFACE EMITTING LASERS;

GALLIUM ALLOYS;

EID: 73249137305 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.112102 Document Type: Article

Times cited : (14)

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