High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1893-1896

  Shao, H ^a   Torfi, A ^a   Li, W ^a   Moscicka, D ^a   Wang, W I ^a  

^a Department of Earth and Environmental Sciences   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices; B3. Infrared devices

Indexed keywords

CRACKING (CHEMICAL); CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED DEVICES; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLITHOGRAPHY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES;

A3. MOLECULAR BEAM EPITAXY; B1. ANTIMONIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. HETEROJUNCTION SEMICONDUCTOR DEVICES; B3. INFRARED DEVICES;

SUBSTRATES;

EID: 63349085821     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.009     Document Type: Article

References (15)

1. Phillips J.D., Moazzami K., Kim J., Edwall D.D., Lee D.L., and Arias J.M. Appl. Phys. Lett. 83 (2003) 3701
2. Schoolar R., and Tenescu E. Proc. SPIE 686 (1986) 2
3. Sidhu R., Duan N., Campbell J.C., and Holmes Jr. A.L. IEEE Photonics Technol. Lett. 17 (2005) 2715
4. Wada M., and Hosomatsu H. Appl. Phys. Lett. 64 10 (1994) 1265
5. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815
6. Srivastava A.K., DeWinter J.C., Caneau C., Pollack M.A., and Zyskind J.L. Appl. Phys. Lett. 48 (1986) 903
7. Wang C.A., Choi H.K., and Charache G.W. IEE Proc.-Optoelectron. 147 (2000) 193
8. Carter B.L., Shaw E., Olesberg J.T., Chan W.K., Hansenberg T.C., and Flatte M.E. Electron. Lett. 36 (2000) 1301
9. Lin C., Zheng Y.L., and Li A.Z. J. Crystal Growth 227 (2001) 605
10. Cederberg J.G., Hafich M.J., Biefeld R.M., and Palmisiano M. J. Crystal Growth 248 (2003) 289
11. Reddy M.H.M., Olesberg J.T., Cao C., and Prineas J.P. Semicond. Sci. Technol. 21 (2006) 267
12. Rakovska A., Berger V., Marcadet X., Vinter B., Glastre G., Oksenhendler T., and Kaplan D. Appl. Phys. Lett. 77 (2000) 397
13. Sze S.M. Physics of Semiconductor Devices (1981), Wiley-Interscience, New York
14. Hood A., Hoffman D., Wei Y., Fuchs F., and Razeghi M. Appl. Phys. Lett. 88 (2006) 0521121
15. Marre G., Vinter B., and Berger V. Semicond. Sci. Technol. 18 (2003) 284