The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: Application to nitrides and oxides

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Bigenwald, P ^a,b   Gil, B ^b,b,c,c   Benharrats, F ^d   Zitouni, K ^d   Kadri, A ^d  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CNRS   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIVERSITY OF ORAN   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL RELATIONS; BIAXIAL TENSIONS; ELASTIC ENERGY; MINIMUM VALUE; POLARIZATION FIELD; QUANTUM-CONFINED STARK EFFECT; SEMICONDUCTOR HETEROSTRUCTURES; SEMIPOLAR; STRAINED LAYERS; TOTAL DENSITY; UNSTRAINED MATERIALS; WURTZITES;

CRYSTALS; ELASTICITY; HETEROJUNCTIONS; NITRIDES; POLARIZATION; ZINC SULFIDE;

CRYSTAL ORIENTATION;

EID: 84856103264     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024009     Document Type: Review

References (39)

1. Nye J F 1957 Physical Properties of Crystals (Oxford: Clarendon Press)
2. Waltereit P, Brandt O, Trampert A, Grahn H T, Menniger J, Ramsteiner M, Reiche M and Ploog K H 2000 Nature 406 865
3. Paskova T 2008 Nitrides With Nonpolar Surfaces (New York: Wiley)
4. Imer B 2009 Nonpolar Nitrides (Saarbrucken: VDM Verlag)
5. Paskova T 2008 Phys. Status Solidi B 245 1011
6. Wrigh A F 1997 Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN J. Appl. Phys. 82 2833
7. Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 R10024
8. Tsubouchi K and Mikoshiba N 1985 IEEE Trans. Son. Ultrason. 32 634
9. Zoroddu A, Bernardini F, Ruggerone P and Fiorentini V 2001 Phys. Rev. B 64 45208
10. Shur M, Bykowski A B and Gaska R 1999 MRS Internet J. Nitride Semicond. Res. 4S1 G1.6
11. Bykhovski A, Gelmont B and Shur M 1993 Appl. Phys. Lett. 63 2243
12. Bernardini F and Fiorentini V 1998 Phys. Rev. B 57 R9427
13. zgür, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doan S, Avrutin V, Cho S-J and Morkoç H 2005 J. Appl. Phys. 98 041301
14. Gopal P and Spaldin N A 2006 J. Electron. Mater. 35 538
15. Duan Y, Qin L, Tang G and Shi L 2008 Eur. Phys. J. B 66 201
16. Yano M, Hashimoto K, Fujimoto K, Koike K, Sasaa S, Inoue M, Uetsuji Y, Ohnishi T and Inaba K 2007 J. Cryst. Growth 301-2 353
17. Takeuchi T, Amano H and Akasaki I 2000 Japan. J. Appl. Phys. 39 413
18. Park S H 2002 J. Appl. Phys. 91 9904
19. Romanov A E, Baker T J, Nakamura S and Speck J S 2006 J. Appl. Phys. 100 023522
20. Gil B, Bigenwald P and Briot O 2008 Superlattices Microstruct. 44 291
21. Feneberg M, Lipski F, Sauer R, Thonke K, Wunderer T, Neubert B, Bruckner P and Scholz F 2006 Appl. Phys. Lett. 89 242112
22. Gil B, Bigenwald P and Briot O 2007 Phys. Stat. Solidi. Rapid. Res. Lett. 6 268
23. Gil B, Briot O and Bigenwald P 2009 Japan. J. Appl. Phys. 48 051002
24. Gil B 2009 Gallium nitride materials and devices IV Proc. SPIE 7216 72160E
25. Feneberg M, Leute R A R, Neuschl B, Thonke K and Bickermann M 2010 Phys. Rev. B 82 075208
26. Tilley R J D 2006 Crystals and Crystal Structures (New York: Wiley)
27. Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
28. Karzel H et al 1996 Phys. Rev. B 53 11425
29. Gil B and Briot O 1997 Phys. Rev. B 55 2530
30. Tchounkeu M, Briot O, Gil B, Alexis J P and Aulombard R L 1996 J. Appl. Phys. 80 5352
31. Julier M, Campo J, Gil B, Lascaray J P and Nakamura S 1998 Phys. Rev. B 57 R6791
32. Gil B and Andenet A. 1997 Phys. Rev. B 56 12446
33. Gil B 2007 Appl. Phys. Lett. 90 121903
34. Ueda M, Kojima K, Funato M, Kawakami Y, Narukawa Y and Mukai T 2006 Appl. Phys. Lett. 89 211907
35. Strittmatter A, Northrup J E, Johnson N M, Kisin M V, Spiberg P, El-Ghoroury H, Usikov A and Syrkin A 2011 Phys. Status Solidi B 248 561
36. Morhain C et al 2005 Phys. Rev. B 72 R241305
37. Chauveau J M, Teisseire M, Kim-Chauveau H, Morhain C and Vinter B 2010 Appl. Phys. Lett. 97 081903
38. Beaur L, Bretagnon T, Brimont C, Guillet T, Gil B, Tainoff D, Teisseire M and Chauveau J M 2011 Appl. Phys. Lett. 98 101913
39. Benharrats F, Zitouni K, Kadri A and Gil B 2010 Superlattices Microstruct. 47 592