SCOPUS 정보 검색 플랫폼

Volumn 62, Issue 1, 2011, Pages 189-194

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

(4) Shah, V A a Dobbie, A a Myronov, M a Leadley, D R a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

Epitaxy; Germanium; Growth kinetics; High quality Ge; Near infrared light; Relaxation; RP CVD; Si; Silicon; Surface roughness; Tensile strain; Threading dislocation densities

Indexed keywords

EPITAXY; HIGH QUALITY; NEAR INFRARED LIGHT; RELAXATION; RP-CVD; SI; THREADING-DISLOCATION DENSITIES;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GERMANIUM; MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON; SINGLE CRYSTALS; SURFACE CHEMISTRY; SURFACE MORPHOLOGY; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACES; TENSILE STRAIN;

SILICON WAFERS;

EID: 79957950997 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2011.03.005 Document Type: Article

Times cited : (64)

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