Considerations on the ideal sample shape for Total Reflection X-ray Fluorescence Analysis

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 66, Issue 11-12, 2011, Pages 815-821

  Horntrich, C ^a   Kregsamer, P ^a   Wobrauschek, P ^a   Streli, C ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Absorption; External standard; Saturation effect; TXRF

Indexed keywords

ABSORPTION EFFECTS; CALIBRATION PROCESS; FLUORESCENCE INTENSITIES; IDEAL SAMPLE; SAMPLE SHAPE; SATURATION EFFECT; SATURATION EFFECTS; SEMICONDUCTOR INDUSTRY; SILICON WAFER SURFACE; SMALL SAMPLES; TOTAL REFLECTION X-RAY FLUORESCENCE ANALYSIS; TXRF;

ABSORPTION; CALIBRATION; ELECTROMAGNETIC WAVE REFLECTION; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; STANDARDS; X RAY ANALYSIS;

FLUORESCENCE;

EID: 84855875144     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2011.11.003     Document Type: Article

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