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Volumn 4, Issue 1, 2012, Pages 106-117

Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

Author keywords

[No Author keywords available]

Indexed keywords

A.C. IMPEDANCE; BACK SURFACE FIELDS; CELL VOLTAGES; CHARACTERISTIC TEMPERATURE; CHARGE RECOMBINATIONS; ELECTRICAL PARAMETER; IMPEDANCE SPECTROSCOPY; LINEAR SWEEP VOLTAMMETRY; MEASURED PARAMETERS; MEASUREMENT TECHNIQUES; MINORITY CARRIER LIFETIMES; QUANTITATIVE CHARACTERIZATION; SENSITIVE FEATURES; SERIES RESISTANCES; SI SOLAR CELLS; SOLID-LIQUID INTERFACES; SOLID-STATE SYSTEM; SPACE CHARGE REGIONS;

EID: 84855608011     PISSN: 17599660     EISSN: 17599679     Source Type: Journal    
DOI: 10.1039/c1ay05455d     Document Type: Article
Times cited : (22)

References (60)
  • 16
    • 0004057053 scopus 로고
    • R. K. Willardson and A. C. Beer, ed., Academic Press, New York
    • H. J. Hovel, in:, R. K. Willardson, and, A. C. Beer, ed. Semiconductors and Semimetals vol. 11, Academic Press, New York, 1975
    • (1975) Semiconductors and Semimetals , vol.11
    • Hovel, H.J.1
  • 18
    • 84855589076 scopus 로고    scopus 로고
    • Ph.D. Thesis, Clarkson University
    • J. E. Garland, Ph.D. Thesis, Clarkson University, 2011
    • (2011)
    • Garland, J.E.1
  • 34
    • 79851485813 scopus 로고
    • W. Fichtner and D. Aemmer ed., Hartung-Gore Verlag, Zurich
    • D. Schroeder, in:, W. Fichtner, and, D. Aemmer, ed., Simulation of Semiconductor Devices and Processes, Vol. 4, Hartung-Gore Verlag, Zurich, 1991, p. 313-319
    • (1991) Simulation of Semiconductor Devices and Processes , vol.4 , pp. 313-319
    • Schroeder, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.