Influence of built-in potential on the effective surface recombination velocity for a heavily doped high-low junction

Physica B: Condensed Matter

Volumn 228, Issue 3-4, 1996, Pages 363-368

  De, S S ^a   Ghosh, A K ^a   Bera, M ^a   Hajra, A ^a   Haldar, J C ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Heavy doping; High low junction; Surface recombination velocity

Indexed keywords

NUMERICAL ANALYSIS; NUMERICAL METHODS; PERMITTIVITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTOR DEVICES;

EID: 0030286238     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(96)00474-7     Document Type: Article

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