Temperature dependence of carrier recombination lifetime in Si wafers

Journal of the Electrochemical Society

Volumn 145, Issue 9, 1998, Pages 3265-3271

  Ichimura, Masaya ^a   Tajiri, Hirotaka ^a   Ito, Tomonao ^a   Arai, Eisuke ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; PHOTOCONDUCTIVITY; THERMAL EFFECTS;

CARRIER RECOMBINATION LIFETIME;

SILICON WAFERS;

EID: 0032163828     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838796     Document Type: Article

References (43)