Near-infrared all-silicon photodetectors

International Journal of Photoenergy

Volumn 2012, Issue , 2012, Pages

  Casalino, M ^a   Coppola, G ^a   Iodice, M ^a   Rendina, I ^a   Sirleto, L ^a  

^a CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FABRY-PEROT INTERFEROMETERS; INFRARED DEVICES; MOS DEVICES; OXIDE SEMICONDUCTORS; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; SILICON;

BULK DEVICES; FABRICATION AND CHARACTERIZATIONS; FABRY-PEROT MICROCAVITIES; INTEGRATED DEVICE; INTERNAL PHOTOEMISSION EFFECTS; NEAR INFRARED; NEAR-INFRARED; RESPONSIVITY; REVERSE-BIAS; SILICON PHOTO-DETECTOR;

METALS;

EID: 84855586573     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2012/139278     Document Type: Article

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