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Journal of Analytical Atomic Spectrometry

Volumn 26, Issue 10, 2011, Pages 1990-1996

Analysis of gaseous reaction products of wet chemical silicon etching by conventional direct current glow discharge optical emission spectrometry (DC-GD-OES)

(3) Hoffmann, Volker a Steinert, Marco b Acker, Jörg c

a IFW DRESDEN (Germany)

b GLOBALFOUNDRIES (Germany)

c UNIVERSITY OF APPLIED SCIENCES (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACID ETCHING; B-DOPED SI; DIRECT CURRENT GLOW DISCHARGES; DISCHARGE CHAMBER; GASEOUS REACTION PRODUCTS; MIXING RATIOS; REACTION GAS; SILICON ETCHING; WET CHEMICALS;

CHEMICAL ANALYSIS; GLOW DISCHARGES; HYDROFLUORIC ACID; NITRIC ACID; OPTICAL EMISSION SPECTROSCOPY; SILICON;

WET ETCHING;

EID: 84855568134 PISSN: 02679477 EISSN: 13645544 Source Type: Journal
DOI: 10.1039/c1ja10033e Document Type: Article

Times cited : (23)

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