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Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 2732-2740

Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

(4) Jayasree, Y a Chalapathi, U a Uday Bhaskar, P a Raja, V Sundara a

a SRI VENKATESWARA UNIVERSITY (India)

Author keywords

Band gap; Chemical bath deposition; SnS; Solar cell absorber; Triethanolamine; XRD

Indexed keywords

CHLORINE COMPOUNDS; DEPOSITION; ENERGY GAP; ETHANOLAMINES; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; SOLAR ABSORBERS; SULFUR COMPOUNDS; THIN FILMS; TIN; TRIETHANOLAMINE;

BATH TEMPERATURES; CHEMICAL BATH DEPOSITION TECHNIQUE; CHEMICAL-BATH DEPOSITION; GROWTH CONDITIONS; OPTIMIZED CONDITIONS; ORTHORHOMBIC STRUCTURES; PRECURSOR CONCENTRATION; SOLAR CELL ABSORBERS;

TIN COMPOUNDS;

EID: 84855542439 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.10.124 Document Type: Article

Times cited : (62)

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