Sublimation growth and structural characterization of 3C-SiC on hexagonal and cubic SiC seeds

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 175-178

  Vasiliauskas, R ^a   Marinova, M ^b   Syvajarvi M ^a   Mantzari, A ^b   Andreadou, A ^b   Lorenzzi, J ^c   Ferro, G ^c   Polychroniadis, E K ^b   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

3C SiC nucleation; Sublimation epitaxy; TEM; Twins; VLS

Indexed keywords

BUFFER LAYERS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEATION; SUBLIMATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC SILICON CARBIDE; SIC BUFFER LAYERS; SIC SUBSTRATES; STRUCTURAL CHARACTERIZATION; SUBLIMATION EPITAXY; SUBLIMATION GROWTH; TWINS; VAPOUR-LIQUID-SOLID MECHANISMS;

SILICON CARBIDE;

EID: 77955451948     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.175     Document Type: Conference Paper

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