SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

First principles calculation of electron-phonon and alloy scattering in strained SiGe

(2) Murphy Armando, F a Fahy, S a,b

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; CARRIER SCATTERING; DEFORMATION POTENTIAL; EFFECTS OF STRAINS; ELECTRON PHONON; ELECTRON PHONON COUPLINGS; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; L-VALLEY; MAIN EFFECT; MATRIX ELEMENTS; NONLINEAR EFFECT; PIEZO-RESISTIVE; SECOND ORDERS; STRAINED SIGE; THERMOELECTRIC FIGURE OF MERIT; TRANSPORT DIRECTION;

CALCULATIONS; ELECTRON-PHONON INTERACTIONS; ELECTRONIC STRUCTURE; ELECTRONS; GERMANIUM; SCATTERING; SCATTERING PARAMETERS; SHEAR FLOW; SHEAR STRAIN; SILICON ALLOYS;

CARRIER MOBILITY;

EID: 84855331922 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669446 Document Type: Article

Times cited : (24)

References (24)

1
- 45749122458
- 10.1002/adma.v19:8
- M. S. Dresselhaus, G. Chen, M. Y. Tang, R. Yang, H. Lee, D. Wang, Z. Ren, J. P. Fleurial, and P. Gogna, Adv. Mater. 19, 1 (2007). 10.1002/adma.v19:8
- (2007) Adv. Mater. , vol.19 , pp. 1
- Dresselhaus, M.S.¹ Chen, G.² Tang, M.Y.³ Yang, R.⁴ Lee, H.⁵ Wang, D.⁶ Ren, Z.⁷ Fleurial, J.P.⁸ Gogna, P.⁹

2
- 0019916789
- 10.1109/T-ED.1982.20659
- Y. Kanda, IEEE Trans. Electron Devices 29, 64 (1982). 10.1109/T-ED.1982.20659
- (1982) IEEE Trans. Electron Devices , vol.29 , pp. 64
- Kanda, Y.¹

3
- 0001038893
- 10.1063/1.363052
- M. Fischetti and S. Laux, J. Appl. Phys. 80, 2234 (1996). 10.1063/1.363052
- (1996) J. Appl. Phys. , vol.80 , pp. 2234
- Fischetti, M.¹ Laux, S.²

4
- 33748304338
- First-principles calculation of alloy scattering in GexSi1-x
- DOI 10.1103/PhysRevLett.97.096606
- F. Murphy-Armando and S. Fahy, Phys. Rev. Lett. 97, 096606 (2006). 10.1103/PhysRevLett.97.096606 (Pubitemid 44330076)
- (2006) Physical Review Letters , vol.97 , Issue.9 , pp. 096606
- Murphy-Armando, F.¹ Fahy, S.²

5
- 0031170219
- 10.1109/55.585350
- F. M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M. M. Rieger, H. Kibbel, and G. Fischer, IEEE Electron Device Lett. 18, 264 (1997). 10.1109/55.585350
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 264
- Bufler, F.M.¹ Graf, P.² Meinerzhagen, B.³ Adeline, B.⁴ Rieger, M.M.⁵ Kibbel, H.⁶ Fischer, G.⁷

6
- 0026926915
- x grown on <001> silicon substrate
- DOI 10.1109/16.155881
- T. Manku and A. Nathan, IEEE Trans. Electron Devices 39, 2082 (1992). 10.1109/16.155881 (Pubitemid 23586022)
- (1992) IEEE Transactions on Electron Devices , vol.39 , Issue.9 , pp. 2082-2089
- Manku Tajinder¹ Nathan Arokia²

7
- 30344472859
- 10.1103/PhysRevB.48.14276
- M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993). 10.1103/PhysRevB.48.14276
- (1993) Phys. Rev. B , vol.48 , pp. 14276
- Rieger, M.M.¹ Vogl, P.²

8
- 76049088639
- 10.1016/j.tsf.2009.10.147
- M. Michaillat, D. Rideau, F. Aniel, C. Tavernier, and H. Jaouen, Thin Solid Films 518, 2437 (2010). 10.1016/j.tsf.2009.10.147
- (2010) Thin Solid Films , vol.518 , pp. 2437
- Michaillat, M.¹ Rideau, D.² Aniel, F.³ Tavernier, C.⁴ Jaouen, H.⁵

9
- 41749116422
- Physics-based modeling of hole inversion-layer mobility in strained-SiGe-on-insulator
- DOI 10.1109/TED.2007.902858
- A. T. Pham, C. Jungemann, and B. Meinerzhagen, IEEE Trans. Electron Devices 54, 2174 (2007). 10.1109/TED.2007.902858 (Pubitemid 351485735)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2174-2182
- Pham, A.-T.¹ Jungemann, C.² Meinerzhagen, B.³

10
- 72049102368
- B. Senapati, IETE J. Res. 53, 215 (2007).
- (2007) IETE J. Res. , vol.53 , pp. 215
- Senapati, B.¹

11
- 2342565128
- 10.1016/j.sse.2004.01.014
- S. Smirnov and H. Kosina, Solid-State Electron. 48, 1325 (2004). 10.1016/j.sse.2004.01.014
- (2004) Solid-State Electron. , vol.48 , pp. 1325
- Smirnov, S.¹ Kosina, H.²

12
- 34047267167
- 10.1103/PhysRevB.75.155201
- S. Joyce, F. Murphy-Armando, and S. Fahy, Phys. Rev. B 75, 155201 (2007). 10.1103/PhysRevB.75.155201
- (2007) Phys. Rev. B , vol.75 , pp. 155201
- Joyce, S.¹ Murphy-Armando, F.² Fahy, S.³

13
- 46749147593
- 10.1103/PhysRevB.78.035202
- F. Murphy-Armando and S. Fahy, Phys. Rev. B 78, 035202 (2008). 10.1103/PhysRevB.78.035202
- (2008) Phys. Rev. B , vol.78 , pp. 035202
- Murphy-Armando, F.¹ Fahy, S.²

14
- 36149023347
- 10.1103/PhysRev.101.944
- C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956). 10.1103/PhysRev.101. 944
- (1956) Phys. Rev. , vol.101 , pp. 944
- Herring, C.¹ Vogt, E.²

15
- 79959436438
- 10.1063/1.3590334
- F. Murphy-Armando and S. Fahy, J. Appl. Phys. 109, 113703 (2011). 10.1063/1.3590334
- (2011) J. Appl. Phys. , vol.109 , pp. 113703
- Murphy-Armando, F.¹ Fahy, S.²

16
- 79953304281
- F. Murphy-Armando and S. Fahy, Chin. J. Phys. 49, 209 (2011).
- (2011) Chin. J. Phys. , vol.49 , pp. 209
- Murphy-Armando, F.¹ Fahy, S.²

17
- 0003877566
- (Springer, Berlin)
- P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 2001), pp. 121-136.
- (2001) Fundamentals of Semiconductors , pp. 121-136
- Yu, P.¹ Cardona, M.²

18
- 70449533121
- 10.1016/j.cpc.2009.07.007
- X. Gonze, B. Amadon, P.-M. Anglade, J.-M. Beuken, F. Bottin, P. Boulanger, F. Bruneval, D. Caliste, R. Caracas, M. Cote, T. Deutsch, L. Genovese, P. Ghosez, M. Giantomassi, S. Goedecker, D. Hamann, P. Hermet, F. Jollet, G. Jomard, S. Leroux, M. Mancini, S. Mazevet, M. Oliveira, G. Onida, Y. Pouillon, T. Rangel, G.-M. Rignanese, D. Sangalli, R. Shaltaf, M. Torrent, M. Verstraete, G. Zerah, and J. Zwanziger, Comput. Phys. Commun. 180, 2582 (2009). 10.1016/j.cpc.2009.07.007
- (2009) Comput. Phys. Commun. , vol.180 , pp. 2582
- Gonze, X.¹ Amadon, B.² Anglade, P.-M.³ Beuken, J.-M.⁴ Bottin, F.⁵ Boulanger, P.⁶ Bruneval, F.⁷ Caliste, D.⁸ Caracas, R.⁹ Cote, M.¹⁰ Deutsch, T.¹¹ Genovese, L.¹² Ghosez, P.¹³ Giantomassi, M.¹⁴ Goedecker, S.¹⁵ Hamann, D.¹⁶ Hermet, P.¹⁷ Jollet, F.¹⁸ Jomard, G.¹⁹ Leroux, S.²⁰ more..

19
- 20144367100
- A brief introduction to the ABINIT software package
- DOI 10.1524/zkri.220.5.558.65066
- X. Gonze, G.-M. Rignanese, M. Verstraete, J.-M. Beuken, Y. Pouillon, R. Caracas, F. Jollet, M. Torrent, G. Zerah, M. Mikami, P. Ghosez, M. Veithen, J.-Y. Raty, V. Olevano, F. Bruneval, L. Reining, R. Godby, G. Onida, D. Hamann, and D. Allan, Z. Kristallogr. 220, 558 (2005). 10.1524/zkri.220.5.558.65066 (Pubitemid 40778240)
- (2005) Zeitschrift fur Kristallographie , vol.220 , Issue.5-6 , pp. 558-562
- Gonze, X.¹ Rignanese, G.-M.² Verstraete, M.³ Beuken, J.-M.⁴ Pouillon, Y.⁵ Caracas, R.⁶ Jollet, F.⁷ Torrent, M.⁸ Zerah, G.⁹ Mikami, M.¹⁰ Ghosez, P.¹¹ Veithen, M.¹² Raty, J.-Y.¹³ Olevano, V.¹⁴ Bruneval, F.¹⁵ Reining, L.¹⁶ Godby, R.¹⁷ Onida, G.¹⁸ Hamann, D.R.¹⁹ Allan, D.C.²⁰ more..

20
- 84855313086
- The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors (http://www.abinit.org)
- The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors (http://www.abinit.org) .

21
- 25544479230
- 10.1103/PhysRevB.34.5390
- M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34, 5390 (1986). 10.1103/PhysRevB.34.5390
- (1986) Phys. Rev. B , vol.34 , pp. 5390
- Hybertsen, M.S.¹ Louie, S.G.²

22
- 79961228959
- 10.1103/PhysRevB.84.035201
- V. Tyuterev, S. Obukhov, N. Vast, and J. Sjakste, Phys. Rev. B 84, 035201 (2011). 10.1103/PhysRevB.84.035201
- (2011) Phys. Rev. B , vol.84 , pp. 035201
- Tyuterev, V.¹ Obukhov, S.² Vast, N.³ Sjakste, J.⁴

23
- 0041040486
- 10.1103/PhysRevB.49.8017
- G. Li, A. Goi, K. Syassen, and M. Cardona, Phys. Rev. B 49, 8017 (1994). 10.1103/PhysRevB.49.8017
- (1994) Phys. Rev. B , vol.49 , pp. 8017
- Li, G.¹ Goi, A.² Syassen, K.³ Cardona, M.⁴

24
- 0000862499
- 10.1103/PhysRevB.50.5226
- X. Zhou, H. van Driel, and G. Mak, Phys. Rev. B 50, 5226 (1994). 10.1103/PhysRevB.50.5226
- (1994) Phys. Rev. B , vol.50 , pp. 5226
- Zhou, X.¹ Van Driel, H.² Mak, G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.