Monte Carlo modeling of the electron mobility in strained Si 1-xGex layers on arbitrarily oriented Si 1-yGey substrates

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1325-1335

  Smirnov, S ^a   Kosina, H ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DEFORMATION; DOPING (ADDITIVES); ELECTRON MOBILITY; INTEGRODIFFERENTIAL EQUATIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; QUANTUM THEORY; SOLID STATE DEVICES; STRAIN;

DEFORMATION-POTENTIAL THEORY; FERMI-DIRAC STATISTICS; KINETIC PROPERTIES; PAULI EXCLUSION PRINCIPLE;

SEMICONDUCTING SILICON;

EID: 2342565128     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.014     Document Type: Article

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