SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 8 PART 2, 2010, Pages

Amorphous indium gallium zinc oxide semiconductor thin film transistors using O2 plasma treatment on the SiNx gate insulator

(9) Kim, Woong Sun a Moon, Yeon Keon a Lee, Sih a Kang, Byung Woo a Kim, Kyung Taek a Lee, Je Hun b Kim, Joo Han b Ahn, Byung Du b Park, Jong Wan a

a Hanyang University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BIAS STABILITY; CHANNEL THICKNESS; DC MAGNETRON SPUTTERING; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE-BIAS STRESS; INDIUM GALLIUM ZINC OXIDES; LOW OXYGEN PARTIAL PRESSURE; ON/OFF CURRENT RATIO; OXYGEN PARTIAL PRESSURE; PLASMA TREATMENT; PROCESSING PARAMETERS; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TURN ON VOLTAGE;

AMORPHOUS FILMS; OXYGEN; PARTIAL PRESSURE; PLASMA APPLICATIONS; PLASMA STABILITY; POSITIVE IONS; SEMICONDUCTING INDIUM; THIN FILMS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77958087838 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.08JF02 Document Type: Article

Times cited : (11)

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