Characterization of conduction mechanisms relevant to device performance in nanoperforated graphene

International Journal of High Speed Electronics and Systems

Volumn 20, Issue 3, 2011, Pages 697-706

  Safron, Nathaniel S ^a   Arnold, Michael S ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

Coulomb blockade; GNR; Graphene nanoribbon; Nanosphere lithography

Indexed keywords

2D ARRAYS; BAND CONDUCTION; CONDUCTANCE MODULATIONS; CONDUCTION MECHANISM; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GNR; GRAPHENE NANORIBBON; LOW TEMPERATURES; NANO SCALE; NANO-STRUCTURED; NANOCONSTRICTIONS; NANOSPHERE LITHOGRAPHY; NEW FORMS; PERIODIC ARRAYS; ROOM TEMPERATURE; SUBTHRESHOLD; ULTRA-THIN;

COULOMB BLOCKADE; FIELD EFFECT TRANSISTORS; THIN FILM TRANSISTORS; TRANSISTORS;

GRAPHENE;

EID: 84555177866     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156411006982     Document Type: Article

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