Gating the Conductivity of Arrays of Metallic Quantum Dots

Journal of Physical Chemistry B

Volumn 107, Issue 50, 2003, Pages 13892-13901

  Remacle, F ^a,b,e   Beverly, K C ^d   Heath, J R ^d   Levine, R D ^a,c  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b UNIVERSITY OF LIÈGE   (Belgium)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e FNRS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; ELECTRON TUNNELING; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MONOLAYERS; PARTICLE SIZE ANALYSIS; SILVER; SPECTROSCOPIC ANALYSIS;

TEMPEARTURE DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0346937201     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp036357h     Document Type: Article

References (46)

1. Murray, C. B.; Kagan, C. R.; Bawendi, M. G. Science 1995, 270, 1335.
2. Whetten, R. L.; Khoury, J. T.; Alvarez, M. M.; Murthy, S.; Vezmar, I.; Wang, Z. L.; Stephens, P. W.; Cleveland, C. L.; Luedtke, W. D.; Landman, U. Adv. Mater. 1996, 8, 428.
3. Ashoori, R. C.; Stormer, H. L.; Weiner, J. S.; Pfeiffer, L. N.; Pearton, S. J.; Baldwin, K. W.; West, K. W. Phys. Rev. Lett. 1992, 68, 3088.
4. Collier, C. P.; Mattersteig, G.; Wong, E. W.; Luo, Y.; Beverly, K.; Sampaio, J.; Raymo, F. M.; Stoddart, J. F.; Heath, J. R. Science 2000, 289, 1172.
5. Kastner, M. A. Ann. Phys. 2000, 9, 885.
6. Davidovic, D.; Tinkham, M. Phys. Rev. B 2000, 61, R16359.
7. Beenakker, C. W. J. Phys. Rev. B 1991, 44, 1646.
8. Collier, C. P.; Vossmeyer, T.; Heath, J. R. Annu. Rev. Phys. Chem. 1998, 49, 371.
9. Murray, C. B.; Kagan, C. R.; Bawendi, M. O. Annu. Rev. Mater. Sci. 2000, 30.
10. Schmid, G.; Baumle, M.; Oeerkens, M.; Helm, I.; Osemann, C.; Sawitowski, T. Chem. Soc. Rev. 1999, 28, 179.
11. Klimov, V. I.; Mikhailovsky, A. A.; Xu, S.; Malko, A.; Hollingsworth, J. A.; Leatherdale, C. A.; Eisler, H. J.; Bawendi, M. G. Science 2000, 290, 314.
12. Remade, F.; Levine, R. D. ChemPhysChem. 2001, 2, 20.
13. Beverly, K. C.; Sample, J. L.; Sampaio, J. F.; Remacle, F.; Heath, J. R. ; Levine, R. D. Proc. Natl. Acad. Sci. U.S.A. 2002, 99, 6456.
14. Black, C. T.; Murray, C. B.; Sandstrom, R. L.; Sun, S. H. Science 2000, 290, 1131.
15. Andres, R. P.; Bein, T.; Dorogi, M.; Feng, S.; Henderson, J. I.; Kubiak, C. P.; Mahoney, W.; Osifchin, R. G.; Reifenberger, R. Science 1996, 272, 1323.
16. Lin, X. M.; Jaeger, H. M.; Sorensen, C. M.; Klabunde, K. J. J. Phys. Chem. B 2001, 105, 3353.
17. Remacle, F.; Levine, R. D. J. Am. Chem. Soc. 2000, 722, 4084.
18. Mott, N. F. Metal-Insulator Transitions; Taylor & Francis: London, 1990.
19. Remacle, F.; Levine, R. D. Proc. Natl. Acad. Sci. U.S.A. 2000, 97, 553.
20. Collier, C. P.; Saykally, R. J.; Shiang, J. J.; Henrichs, S. E.; Heath, J. R. Science 1997, 277, 1978.
21. Beverly, K. C.; Sampaio, J. F.; Heath, J. R. J. Phys. Chem. B 2002, 106, 2131.
22. Sampaio, J. F.; Beverly, K. C.; Heath, J. R. J. Phys. Chem. B 2001, 705, 8797.
23. Sample, J. L.; Beverly, K. C.; Chaudhari, P. R.; Remacle, F.; Heath, J. R.; Levine, R. D. Adv. Mater. 2002, 114, 124.
24. 37 there is an obvious interest to extend these measurements to low temperatures.
25. Remacle, F.; Levine, R. D. Nano Lett. 2002, 2, 697.
26. Gallagher, T. F. Rydberg Atoms; Cambridge University Press: Cambridge, 1994.
27. Remacle, F.; Levine, R. D.; Schlag, E. W.; Selzle, H. L.; Held, A. J. Phys. Chem. 1996, 700, 15320.
28. This number is not a universal constant. The transition voltage depends on both the size of the array, the compression the degree of disorder, and the temperature. The number we quote is for the arrays of interest here, at low temperatures. See also ref 38.
29. Levine, R. D. Quantum Mechanics of Molecular Rate Processes; Dover: New York, 1999.
30. Laundauer, R. IBM J. Res. Dev. 1957, 7, 223.
31. Imry, Y.; Landauer, R. Rev. Mod. Phys. 1999, 77, S306.
32. Imry, Y. Introduction to Mesoscopic Physics; Oxford University Press: Oxford, 2002.
33. Mujica, V.; Kemp, M.; Ratner, M. A. J. Chem. Phys. 1994, 707, 6849.
34. Datta, S. Electronic Transport in Mesoscopic Systems; Cambridge University Press: Cambridge, 1995.
35. Nitzan, A. Annu. Rev. Phys. Chem. 2001, 52, 681.
36. Remacle, F.; Levine, R. D. Isr. J. Chem. 2003, 42, 269.
37. Remacle, F.; Beverly, K. C.; Heath, J. R.; Levine, R. D. J. Phys. Chem. B 2002, 106, 4116.
38. Remacle, F.; Levine, R. D. Appl. Phys. Lett. 2003, 82, 4543.
39. Remacle, F.; Collier, C. P.; Heath, J. R.; Levine, R. D. Chem. Phys. Lett. 1998, 297, 453.
40. Remacle, F.; Collier, C. P.; Markovitch, G.; Heath, J. R.; Banin, U.; Levine, R. D. J. Phys. Chem. B 1998, 702, 7727.
41. -8 au.
42. 29 This refinement is not essential here because the states of the array form themselves a quasicontinuum. It is essential for more discrete devices, and a study comparing experiment and theory for such systems is in preparation for publication.
43. Remacle, F.; Levine, R. D. J. Phys. Chem. A 2000, 104, 10435.
44. Zallen, R. The Physics of Amorphous Solids; Wiley: New York, 1983.
45. McConnell, H. M. J. Chem. Phys. 1961, 35, 508.
46. Shklovskii, B. I.; Efros, A. L. Electronic Properties of Doped Semiconductors; Springer-Verlag: Berlin, 1984.