Characterization of silicon heterojunctions for solar cells

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Kleider, Jean Paul ^a   Alvarez, Jose ^a   Ankudinov, Alexander Vitalievitch ^b   Gudovskikh, Alexander Sergeevitch ^c   Gushchina, Ekaterina Vladimirovna ^b   Labrune, Martin ^d,e   Maslova, Olga Alexandrovna ^a,c   Favre, Wilfried ^a   Gueunier Farret, Marie Estelle ^a   Rocai Cabarrocas, Pere ^d   Terukov, Eugene Ivanovitch ^b  

^a UNIV PARIS SUD   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^e TOTAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; INVERSION LAYERS; SILICON SOLAR CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BAND OFFSETS; CONDUCTANCE MEASUREMENT; CONDUCTIVE CHANNELS; CONDUCTIVE PROBE ATOMIC FORCE MICROSCOPIES; CRYSTALLINE SILICONS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); SILICON HETEROJUNCTIONS; STRONG INVERSION; A-SI:H; P-TYPE;

AMORPHOUS SILICON;

EID: 84255204744     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-152     Document Type: Article

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