Ferroelectric thin film field-effect transistors based on ZnO/BaTiO 3 heterostructures

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1789-1793

  Brandt, Matthias ^a   Frenzel, Heiko ^a   Hochmuth, Holger ^a   Lorenz, Michael ^a   Grundmann, Marius ^a   Schubert, Jürgen ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DRAIN CURRENT; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRIC THIN FILMS; NONVOLATILE STORAGE; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; ELECTRICAL PROPERTY; GATE VOLTAGES; HETEROSTRUCTURES; LATTICE-MATCHED; MEMORY EFFECTS; NB-DOPED SRTIO; NONVOLATILE MEMORY DEVICES; SOURCE-DRAIN CURRENT; SWITCHING CYCLES; TRANSFER PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 77954877186     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3086720     Document Type: Conference Paper

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