Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Microelectronics Reliability

Volumn 52, Issue 1, 2012, Pages 141-146

  Herth, E ^a,c   Desre H ^a   Algre E ^b   Legrand, C ^a   Lasri, T ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b National Centre of Scientific Research   (France)

^c UNIVERSITÉ DE FRANCHE COMTÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BOND PROPERTIES; CHEMICAL COMPOSITIONS; DEPOSITION PARAMETERS; DILUTION GAS; EXTINCTION COEFFICIENTS; FLOW RATIOS; HIGH FREQUENCY; HIGH REFRACTIVE INDEX; LOW CONCENTRATIONS; LOW TEMPERATURES; LOW THERMAL BUDGET; OPTICAL APPLICATIONS; OPTICAL COEFFICIENTS; RADIO FREQUENCY POWER; RF-POWER;

AMORPHOUS SILICON; BOND STRENGTH (CHEMICAL); HYDROGEN BONDS; HYDROGENATION; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SILICON NITRIDE; WAVEGUIDES;

OPTICAL FILMS;

EID: 84155171248     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.004     Document Type: Conference Paper

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