Correspondence relation between [N-H]/[Si-H] ratio and their optical loss properties in silicon nitride thin films

2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Volumn , Issue , 2009, Pages 3319-3322

  Mao, S C ^a,b,c   Xu, Y L ^a   Lu, G ^d  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Hydrogen concentration; Optical device; PECVD; Propagation loss; Sin films; Waveguide

Indexed keywords

GAS-FLOW RATIO; H-BONDS; HYDROGEN CONCENTRATION; HYDROGEN CONTENTS; OPTICAL MEASUREMENT; OPTICAL PROPAGATION LOSS; PECVD; PROPAGATION LOSS; RADIO FREQUENCY POWER; SI-H BONDS; SILICON NITRIDE THIN FILMS; SIN FILMS;

AERODYNAMICS; CELL MEMBRANES; FILM GROWTH; FLOW OF GASES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS ABSORPTION; HYDROGEN; HYDROGEN BONDS; INDUSTRIAL ELECTRONICS; OPTICAL DATA PROCESSING; OPTICAL DEVICES; OPTICAL INSTRUMENTS; OPTICAL PROPERTIES; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO; RADIO WAVES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SOLAR POWER GENERATION; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; THIN FILMS; WAVEGUIDES;

OPTICAL FILMS;

EID: 70349312953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIEA.2009.5138817     Document Type: Conference Paper

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