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Volumn 99, Issue 24, 2011, Pages

Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiN x films

(6) Lin, Cheng Dao a Cheng, Chih Hsien a Lin, Yung Hsiang a Wu, Chung Lun a Pai, Yi Hao a Lin, Gong Ru a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER EFFECTS; CAPACITANCE-VOLTAGE HYSTERESIS; CHARGE RETENTION; ELECTRICALLY INJECTED; ELECTRO-LUMINESCENT; EXTERNAL QUANTUM EFFICIENCY; INJECTED CARRIERS; INTERFACIAL BARRIERS; LOW CARRIER DENSITY; RADIATIVE RECOMBINATION; SI QUANTUM DOT;

LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE;

QUANTUM EFFICIENCY;

EID: 83755173238 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3663530 Document Type: Article

Times cited : (26)

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