-
1
-
-
0031167986
-
-
EDLEDZ 0741-3106, 10.1109/55.585357
-
J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee, and Y. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106, 18, 278 (1997). 10.1109/55.585357
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 278
-
-
Welser, J.J.1
Tiwari, S.2
Rishton, S.3
Lee, K.Y.4
Lee, Y.5
-
2
-
-
0034707054
-
-
NATUAS 0028-0836, 10.1038/35044012
-
L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature (London) NATUAS 0028-0836, 408, 440 (2000). 10.1038/35044012
-
(2000)
Nature (London)
, vol.408
, pp. 440
-
-
Pavesi, L.1
Negro, L.D.2
Mazzoleni, C.3
Franzo, G.4
Priolo, F.5
-
3
-
-
0037373526
-
-
10.1016/S1386-9477(02)00605-7 1386-9477
-
L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburroa, L. Pavesi, F. Priolo, D. Pacifici, G. Franz, and F. Iacona, Physica E, 16, 297 (2003). 10.1016/S1386-9477(02)00605-7 1386-9477
-
(2003)
Physica e
, vol.16
, pp. 297
-
-
Dal Negro, L.1
Cazzanelli, M.2
Daldosso, N.3
Gaburroa, Z.4
Pavesi, L.5
Priolo, F.6
Pacifici, D.7
Franz, G.8
Iacona, F.9
-
4
-
-
0036723499
-
Raman, photoluminescence and optical absorption studies on nanocrystalline silicon
-
DOI 10.1016/S0921-5107(02)00234-9, PII S0921510702002349
-
P. Mishra and K. P. JaMater. Sci. Eng., B MSBTEK 0921-5107, 95, 202 (2002). 10.1016/S0921-5107(02)00234-9 (Pubitemid 34940137)
-
(2002)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
, vol.95
, Issue.3
, pp. 202-213
-
-
Mishra, P.1
Jain, K.P.2
-
5
-
-
0030241362
-
-
IETDAI 0018-9383, 10.1109/16.535349
-
H. I. Hanafi, S. Tiwari, and I. Khan, IEEE Trans. Electron Devices IETDAI 0018-9383, 43, 1553 (1996). 10.1109/16.535349
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1553
-
-
Hanafi, H.I.1
Tiwari, S.2
Khan, I.3
-
6
-
-
33847745009
-
Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids
-
DOI 10.1364/OE.15.002555
-
G. -R. LC. J. Land C. K. LOpt. Express OPEXFF 1094-4087, 15, 2555 (2007). 10.1364/OE.15.002555 (Pubitemid 46376921)
-
(2007)
Optics Express
, vol.15
, Issue.5
, pp. 2555-2563
-
-
Lin, G.-R.1
Lin, C.-J.2
Lin, C.-K.3
-
7
-
-
0034288237
-
-
SMICES 1063-7826, 10.1134/1.1317584
-
K. S. Zhuravlev and A. Y. Kobitsky, Semiconductors SMICES 1063-7826, 34, 1203 (2000). 10.1134/1.1317584
-
(2000)
Semiconductors
, vol.34
, pp. 1203
-
-
Zhuravlev, K.S.1
Kobitsky, A.Y.2
-
8
-
-
77049088804
-
Excitation and de-excitation properties of silicon quantum dots under electrical pumping
-
DOI 10.1063/1.1505117
-
A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, Appl. Phys. Lett. APPLAB 0003-6951, 81, 1866 (2002). 10.1063/1.1505117 (Pubitemid 35048340)
-
(2002)
Applied Physics Letters
, vol.81
, Issue.10
, pp. 1866
-
-
Irrera, A.1
Pacifici, D.2
Miritello, M.3
Franzo, G.4
Priolo, F.5
Iacona, F.6
Sanfilippo, D.7
Di Stefano, G.8
Fallica, P.G.9
-
9
-
-
4243209194
-
-
PRBMDO 0163-1829, 10.1103/PhysRevB.48.11024
-
C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B PRBMDO 0163-1829, 48, 11024 (1993). 10.1103/PhysRevB.48.11024
-
(1993)
Phys. Rev. B
, vol.48
, pp. 11024
-
-
Delerue, C.1
Allan, G.2
Lannoo, M.3
-
10
-
-
0000763783
-
-
PRBMDO 0163-1829, 10.1103/PhysRevB.54.4416
-
G. C. John and V. A. Singh, Phys. Rev. B PRBMDO 0163-1829, 54, 4416 (1996). 10.1103/PhysRevB.54.4416
-
(1996)
Phys. Rev. B
, vol.54
, pp. 4416
-
-
John, G.C.1
Singh, V.A.2
-
11
-
-
0009992880
-
-
ACPHAA 0365-1444
-
H. Berthelot, Ann. Chim. Phys. ACPHAA 0365-1444, 66, 110 (1862).
-
(1862)
Ann. Chim. Phys.
, vol.66
, pp. 110
-
-
Berthelot, H.1
-
12
-
-
0031372294
-
-
SUMIEK 0749-6036, 10.1006/spmi.1996.0444
-
D. Babic and R. Tsu, Superlattices Microstruct. SUMIEK 0749-6036, 22, 581 (1997). 10.1006/spmi.1996.0444
-
(1997)
Superlattices Microstruct.
, vol.22
, pp. 581
-
-
Babic, D.1
Tsu, R.2
-
13
-
-
0000295444
-
-
PRVAAH 0096-8250, 10.1103/PhysRev.128.2093
-
D. R. Penn, Phys. Rev. PRVAAH 0096-8250, 128, 2093 (1962). 10.1103/PhysRev.128.2093
-
(1962)
Phys. Rev.
, vol.128
, pp. 2093
-
-
Penn, D.R.1
-
14
-
-
0000957936
-
-
JAPIAU 0021-8979, 10.1063/1.365762
-
R. Tsu, D. Babic, and L. Ioriatti, J. Appl. Phys. JAPIAU 0021-8979, 82, 1327 (1997). 10.1063/1.365762
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 1327
-
-
Tsu, R.1
Babic, D.2
Ioriatti, L.3
-
15
-
-
36449008130
-
A silicon nanocrystals based memory
-
DOI 10.1063/1.116085, PII S0003695196003105
-
S. Tiwari, F. Rana, H. Hanafi, A. Hartsteand E. F. Crabbe, Appl. Phys. Lett. APPLAB 0003-6951, 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.10
, pp. 1377-1379
-
-
Tiwari, S.1
Rana, F.2
Hanafi, H.3
Hartstein, A.4
Crabbe, E.F.5
Chan, K.6
-
16
-
-
0041876430
-
-
APPLAB 0003-6951, 10.1063/1.1596371
-
N. M. Park, S. H. Jeon, H. D. Yang, H. Hwang, and S. J. Park, Appl. Phys. Lett. APPLAB 0003-6951, 83, 1014 (2003). 10.1063/1.1596371
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1014
-
-
Park, N.M.1
Jeon, S.H.2
Yang, H.D.3
Hwang, H.4
Park, S.J.5
-
17
-
-
0036643836
-
Concept of floating-dot memory transistors on silicon-on-insulator substrate
-
DOI 10.1016/S0167-9317(02)00463-X, PII S016793170200463X
-
O. Winkler, F. Merget, M. Heuser, B. Hadam, M. Baus, B. Spangenberg, and H. Kurz, Microelectron. Eng. MIENEF 0167-9317, 61-62, 497 (2002). 10.1016/S0167-9317(02)00463-X (Pubitemid 34613407)
-
(2002)
Microelectronic Engineering
, vol.61-62
, pp. 497-503
-
-
Winkler, O.1
Merget, F.2
Heuser, M.3
Hadam, B.4
Baus, M.5
Spangenberg, B.6
Kurz, H.7
-
18
-
-
0038665192
-
-
APPLAB 0003-6951, 10.1063/1.1567039
-
J. K. Kim, H. J. Cheong, Y. Kim, J. Y. Yi, and H. J. Park, Appl. Phys. Lett. APPLAB 0003-6951, 82, 2527 (2003). 10.1063/1.1567039
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 2527
-
-
Kim, J.K.1
Cheong, H.J.2
Kim, Y.3
Yi, J.Y.4
Park, H.J.5
-
19
-
-
34250856301
-
Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer
-
DOI 10.1016/j.susc.2006.11.064, PII S0039602806012568
-
C. Sargentis, K. Giannakopouloa, A. Travlos, and D. Tsamakis, Surf. Sci. SUSCAS 0039-6028, 601, 2859 (2007). 10.1016/j.susc.2006.11.064 (Pubitemid 46970771)
-
(2007)
Surface Science
, vol.601
, Issue.13
, pp. 2859-2863
-
-
Sargentis, Ch.1
Giannakopoulos, K.2
Travlos, A.3
Tsamakis, D.4
-
20
-
-
0000726099
-
-
JLUMA8 0022-2313, 10.1016/S0022-2313(99)00096-4
-
K. Soni, L. F. Fonseca, O. Resto, M. Buzaianu, and S. Z. Weisz, J. Lumin. JLUMA8 0022-2313, 83-84, 187 (1999). 10.1016/S0022-2313(99)00096-4
-
(1999)
J. Lumin.
, vol.8384
, pp. 187
-
-
Soni, K.1
Fonseca, L.F.2
Resto, O.3
Buzaianu, M.4
Weisz, S.Z.5
-
21
-
-
14644445217
-
Improved charge injection in Si nanocrystal non-volatile memories
-
DOI 10.1016/j.microrel.2004.11.028, PII S0026271404004779, 13th Workshop on Dielectrics in Microelectronics
-
J. Carreras, B. Garrido, and J. R. Morante, Microelectron. Reliab. MCRLAS 0026-2714, 45, 899 (2005). 10.1016/j.microrel.2004.11.028 (Pubitemid 40309061)
-
(2005)
Microelectronics Reliability
, vol.45
, Issue.5-6
, pp. 899-902
-
-
Carreras, J.1
Garrido, B.2
Morante, J.R.3
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