Electrical-field control of metal-insulator transition at room temperature in Pb(Zr0.2Ti0.8)03/La1-xBaxMnO 3 field-effect transistor

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4860-4862

  Kanki, Teruo ^a   Park, Young Geun ^a   Tanaka, Hidekazu ^a,b   Kawai, Tomoji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON DIFFRACTION; FERROMAGNETIC MATERIALS; LANTHANUM COMPOUNDS; POLARIZATION; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SUPERCONDUCTING TRANSITION TEMPERATURE;

CHANNEL LAYERS; VOLTAGE HYSTERESIS LOOP;

FIELD EFFECT TRANSISTORS;

EID: 0346936307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632028     Document Type: Article

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