Fabrication of vertically stacked single-crystalline Si nanowires using self-limiting oxidation

Nanotechnology

Volumn 23, Issue 1, 2012, Pages

  Wang, Tao ^a   Yu, Bin ^b   Liu, Yan ^c   Guo, Qing ^a   Sheng, Kuang ^a   Deen, M Jamal ^d  

^a ZHEJIANG UNIVERSITY   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c ZHEJIANG UNIVERSITY SCHOOL OF MEDICINE   (China)

^d MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SELF-LIMITING PROCESS; SI NANOWIRE; SILICON FINS; SIMPLE METHOD; SINGLE CRYSTAL SILICON; SINGLE-CRYSTALLINE; THERMALLY OXIDIZED; VERTICAL PROFILE; VERTICAL STACKS;

FINS (HEAT EXCHANGE); FORCED CONVECTION; INDUCTIVELY COUPLED PLASMA; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 83455211762     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/1/015307     Document Type: Article

References (21)

1. Yang C, Zhong Z and Lieber C M 2005 Science 310 1304
2. Ĩiguez B, Fjeldly T A, Lzaro A, Danneville F and Deen M J 2006 IEEE Trans. Electron Devices 53 2128
3. Shinwari M W, Shinwari M F, Deen M J and Selvaganapathy P R 2011 Sensors Actuators B 160 441
4. Wu Y, Xiang J, Yang C, Lu W and Lieber C M 2004 Nature 430 61
5. Kedzierski J, Bokor J and Kisielowski C 1997 J. Vac. Sci. Technol. B 15 2825
6. Liu H, Biegelsen D K, Johnson N M, Ponce F A and Pease R F W 1993 J. Vac. Sci. Technol. B 11 2532
7. Bera L K et al 2006 IEDM p3107
8. Wu X, Chan P C H, Zhang S, Feng C and Chan M 2005 IEEE Trans. Electron Devices 52 1998
9. B GmbH 1994 US Patent Specification 4855017
10. B GmbH 1994 US Patent Specification 4784720
11. B GmbH 1994 German Patent Specification 4241045C1
12. Deal B E and Grove A S 1965 J. Appl. Phys. 36 3770
13. Shimura T, Yasutake K, Umeno M and Nagase M 2005 Appl. Phys. Lett. 86 071903
14. Butter C C and Zacharias M 2006 Appl. Phys. Lett. 89 263106
15. Heidemeyer H, Single C, Zhou F, Prins F E, Kern D P and Plies E 2000 J. Appl. Phys. 87 4580
16. Rogdakis K, Bescond M, Bano E and Zekentes K 2007 Nanotechnology 18 475715
17. Iacopi F, Vereecken P M, Schaekers M, Caymax M, Moelans N, Blanpain B, Richard O, Detavernier C and Griffiths H 2007 Nanotechnology 18 505307
18. Bae J, Kim H, Zhang X M, Dang C H, Zhang Y, Choi Y J, Nurmikko A and Wang Z L 2010 Nanotechnology 21 095502
19. Convertino A, Cuscuna M and Martelli F 2010 Nanotechnology 21 355701
20. Shinwari M W, Deen M J and Landheer D 2007 Microelectron. Reliab. 47 2025
21. Zhu X X, Li Q L, Ioannou D E, Gu D F, Bonevich J E, Baumgart H, Suehle J S and Richter C A 2011 Nanotechnology 22 254020