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Solid State Communications

Volumn 132, Issue 10, 2004, Pages 707-711

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

(7) Bian, L F a Jiang, D S a Tan, P H a Lu, S L a Sun, B Q a Li, L H b Harmand, J C b

a INSTITUTE OF SEMICONDUCTORS (China)

b UNIV PARIS SUD (France)

Author keywords

A. GaAsSbN epilayer; D. Pl. Spectra; E. RTA

Indexed keywords

ANNEALING; CRYSTAL LATTICES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CONDUCTION BANDS; CRYSTAL QUALITY; EPILAYERS; WAVELENGTHS;

THIN FILMS;

EID: 8344225943 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2004.09.016 Document Type: Article

Times cited : (35)

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