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Volumn 111, Issue 6, 2011, Pages 487-492

Some aspects of the field evaporation behaviour of GaSb

Author keywords

Atom probe tomography; Compound semiconductors; Field evaporation; Gallium antimonide

Indexed keywords

ATOM LASERS; ATOMS; ELECTRIC FIELDS; EVAPORATION; III-V SEMICONDUCTORS; PROBES; TUNGSTEN;

EID: 80052547008     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.11.019     Document Type: Article
Times cited : (86)

References (45)
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    • this issue, doi:10.1016/j.ultramic.2010.11.021
    • D.W. Saxey, Ultramicroscopy, this issue, doi:10.1016/j.ultramic.2010.11.021.
    • Ultramicroscopy
    • Saxey, D.W.1
  • 40
    • 85030576236 scopus 로고    scopus 로고
    • Ph.D Thesis, University of Rouen, France
    • L Renaud, Ph.D Thesis, University of Rouen, France, 2001.
    • (2001)
    • Renaud, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.