Electrical properties and Raman scattering investigation of Ag doped ZnO thin films

Solid State Communications

Volumn 152, Issue 2, 2012, Pages 147-150

  Li, W J ^a   Kong, C Y ^a   Ruan, H B ^b   Qin, G P ^a,b   Huang, G J ^a   Yang, T Y ^a   Liang, W W ^a   Zhao, Y H ^a   Meng, X D ^a   Yu, P ^a   Cui, Y T ^a   Fang, L ^b  

^a CHONGQING NORMAL UNIVERSITY   (China)

^b CHONGQING UNIVERSITY   (China)

Author keywords

A. Ag doped ZnO; B. Raman scattering spectrum; C. Local vibrational modes (LVMs); D. p type

Indexed keywords

AG ATOMS; AG DOPING; ANNEALING CONDITION; B. RAMAN SCATTERING SPECTRUM; DOPED ZNO; HALL MEASUREMENTS; LOCAL VIBRATIONAL MODE; P TYPE ZNO; P-TYPE; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY MAGNETRON SPUTTERING; RAMAN ANALYSIS; RAMAN SCATTERING SPECTRA; ROOM TEMPERATURE; SCATTERING PROPERTY; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC SPECTROSCOPY; DEFECTS; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL FILMS; QUARTZ; RAMAN SCATTERING; SCATTERING; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDE;

SILVER;

EID: 82955235528     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.10.006     Document Type: Article

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