Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 394-402

  Al Asmar, R ^a,b   Atanas, J P ^b   Ajaka, M ^b   Zaatar, Y ^b   Ferblantier, G ^a   Sauvajol, J L ^c   Jabbour, J ^a   Juillaget, S ^a   Foucaran, A ^a  

^a UNIV MONTPELLIER   (France)

^b Universite Libanaise   (Libyan Arab Jamahiriya)

^c CNRS   (France)

Author keywords

A1. Annealing treatment; A1. Growth temperature; A1. Optical transmittance; A1. Raman studies; A3. Electron beam evaporation; B1. Zinc oxide

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL GROWTH; ELECTRON BEAMS; EVAPORATION; FOURIER TRANSFORMS; OPACITY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ANNEALING TREATMENT; ELECTRON BEAM EVAPORATION; GROWTH TEMPERATURE; RAMAN STUDIES;

THIN FILMS;

EID: 18444412931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.035     Document Type: Article

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