Structural study of BF2 ion implantation and post annealing of BaSi2 epitaxial films

Japanese Journal of Applied Physics

Volumn 50, Issue 12, 2011, Pages

  Hara, Kosuke O ^a,b   Usami, Noritaka ^a,b   Hoshi, Yusuke ^c   Shiraki, Yasuhiro ^c   Suzuno, Mitsushi ^d   Toko, Kaoru ^b,d   Suemasu, Takashi ^b,d  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; BARIUM OXIDES; ELEMENT MAPPING; ENERGY DISPERSIVE X RAY SPECTROSCOPY; P-TYPE; POST ANNEALING; RAMAN PEAK; RED SHIFT; STRUCTURAL STUDIES;

BARIUM; EPITAXIAL GROWTH; ION IMPLANTATION; IONS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SILICON; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

EPITAXIAL FILMS;

EID: 82955227972     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.121202     Document Type: Article

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