VHDL-AMS model of a dual gate graphene FET

Forum on Specification and Design Languages

Volumn , Issue , 2011, Pages 39-43

  Umoh, Ime J ^a   Kazmierski, Tom J ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DUAL GATES; EXPERIMENTAL DATA; GRAPHENE DEVICES; HIGH DRAIN VOLTAGE; IV CHARACTERISTICS; SATURATION CURRENT; VHDL-AMS MODEL;

FIELD EFFECT TRANSISTORS; GRAPHENE; SPECIFICATIONS;

DRAIN CURRENT;

EID: 82955165009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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