Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Whang, S J ^a   Lee, S J ^a   Yang, W F ^a   Cho, B J ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; MICROSTRUCTURE; MOSFET DEVICES; SINGLE CRYSTALS;

ENHANCEMENT MODE; SOURCE/DRAIN ELECTRODE; SUBTHRESHOLD SWING;

NANOWIRES;

EID: 34548050455     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2772665     Document Type: Article

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