-
1
-
-
0022214845
-
3-BO systems [A:Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or 2n] at temperatures over 1000°C
-
3-BO systems [A:Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or 2n] at temperatures over 1000°C," J. Solid State Chem. 60, 382-384 (1985);
-
(1985)
J. Solid State Chem.
, vol.60
, pp. 382-384
-
-
Kimizuka, N.1
Mohri, T.2
-
3
-
-
84863324065
-
-
Japanese Published Patent Application No. S63-210022; No. S63-210023; No. S63-210024; No. S63-215519; No. S63-239117; No. S63-265818
-
N. Kimizuka and T. Mohri, Japanese Published Patent Application No. S63-210022; No. S63-210023; No. S63-210024; No. S63-215519; No. S63-239117; No. S63-265818.
-
-
-
Kimizuka, N.1
Mohri, T.2
-
6
-
-
0001017008
-
m(M=In, Ga; M=Integer) described by four-dimensional superspace group
-
m(M=In, Ga; m=Integer) Described by Four-Dimensional Superspace Group," J. Solid State Chem. 139, 347-355 (1998).
-
(1998)
J. Solid State Chem.
, vol.139
, pp. 347-355
-
-
Li, C.1
Bando, Y.2
Nakamura, M.3
-
7
-
-
84863324365
-
-
Japanese Published Patent Application No. H8-264794
-
H. Matsumura, Japanese Published Patent Application No. H8-264794.
-
-
-
Matsumura, H.1
-
8
-
-
84863302879
-
-
Japanese Published Patent Application No. H5-251705
-
T. Hamada and H. Ito, Japanese Published Patent Application No. H5-251705.
-
-
-
Hamada, T.1
Ito, H.2
-
9
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film- transistors using amorphous oxide semiconductors
-
K. Nomura, H. Ohta, A. Takagi et al., "Room-temperature Fabrication of Transparent Flexible Thin-film-transistors Using Amorphous Oxide Semiconductors," Nature 432, 488-492 (2004).
-
(2004)
Nature
, vol.432
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
-
10
-
-
0038362743
-
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
-
K. Nomura, H. Ohta, A. Takagi et al., "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor," SCIENCE 300 1269-1272 (2003).
-
(2003)
Science
, vol.300
, pp. 1269-1272
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
-
11
-
-
34547937590
-
Current status of, challenges to, and perspective view of AM-OLED
-
H. N. Lee, J. W. Kyung, S. K. Kang et al., "Current Status of, Challenges to, and Perspective View of AM-OLED," IDW'06 Proc., 663-666(2006).
-
(2006)
IDW'06 Proc.
, pp. 663-666
-
-
Lee, H.N.1
Kyung, J.W.2
Kang, S.K.3
-
12
-
-
55149104462
-
12.1-In. WXGA AMOLED display driven by Indium-Gallium-Zinc oxide TFTs array
-
J. K. Jeong, J. H. Jeong, J. H. Choi et al., "12.1-In. WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array," SID Symposium Digest, 39 1-4 (2008).
-
(2008)
SID Symposium Digest
, vol.39
, pp. 1-4
-
-
Jeong, J.K.1
Jeong, J.H.2
Choi, J.H.3
-
13
-
-
84863312020
-
-
Japanese Published Patent Application No. 2003-86808
-
M. Kawasaki, H. Ohno, K. Kobayashi et al., Japanese Published Patent Application No. 2003-86808.
-
-
-
Kawasaki, M.1
Ohno, H.2
Kobayashi, K.3
-
15
-
-
85072130335
-
Development of driver-integrated panel using amorphous In-Ga-Zn-oxide TFT
-
T. Osada, K. Akimoto, T. Sato et al., "Development of Driver-integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT," SID Symposium Digest, 40 184-187 (2009).
-
(2009)
SID Symposium Digest
, vol.40
, pp. 184-187
-
-
Osada, T.1
Akimoto, K.2
Sato, T.3
-
16
-
-
77954150774
-
Development of driver-integrated panel using amorphous In-Ga-Zn-oxide TFT
-
T. Osada, K. Akimoto, T. Sato et al., "Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT," Proc. AM-FPD'09 Digest, 33-36 (2009).
-
(2009)
Proc. AM-FPD'09 Digest
, pp. 33-36
-
-
Osada, T.1
Akimoto, K.2
Sato, T.3
-
17
-
-
77958549292
-
Numerical analysis on temperature dependence of the characteristics of amorphous In-Ga-Zn-oxide TFT
-
H. Godo, D. Kawae, S. Yoshitomi et al., "Numerical Analysis on Temperature Dependence of the Characteristics of Amorphous In-Ga-Zn-Oxide TFT," SID Symposium Digest, 40 1110-1112 (2009).
-
(2009)
SID Symposium Digest
, vol.40
, pp. 1110-1112
-
-
Godo, H.1
Kawae, D.2
Yoshitomi, S.3
-
18
-
-
77954162617
-
Temperature dependence of characteristics and electronic structure for amorphous In-Ga-Zn-oxide TFT
-
H. Godo, D. Kawae, S. Yoshitomi et al., "Temperature Dependence of Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide TFT," Proc. AM-FPD'09 Digest, 41-44 (2009).
-
(2009)
Proc. AM-FPD'09 Digest
, pp. 41-44
-
-
Godo, H.1
Kawae, D.2
Yoshitomi, S.3
-
19
-
-
84867918919
-
4.0-in. QVGA AMOLED display using In-Ga-Zn-oxide TFTs with a novel passivation layer
-
H. Ohara, T. Sasaki, K. Noda et al., "4.0-in. QVGA AMOLED Display using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer," SID Symposium Digest, 40 284-287 (2009).
-
(2009)
SID Symposium Digest
, vol.40
, pp. 284-287
-
-
Ohara, H.1
Sasaki, T.2
Noda, K.3
-
20
-
-
77954151657
-
Amorphous In-Ga-Zn-oxide TFTs with suppressed variation for 4.0 inch QVGA AMOLED display
-
H. Ohara, T. Sasaki, K. Noda et al., "Amorphous In-Ga-Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display," Proc. AM-FPD'09 Digest, 227-230 (2009).
-
(2009)
Proc. AM-FPD'09 Digest
, pp. 227-230
-
-
Ohara, H.1
Sasaki, T.2
Noda, K.3
-
21
-
-
77954135415
-
Theoretical analysis of IGZO transparent amorphous oxide semiconductor
-
M. Takahashi, H. Kishida, A. Miyanaga et al., "Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor," IDW'08 Digest, 1637-1640 (2008).
-
(2008)
IDW'08 Digest
, pp. 1637-1640
-
-
Takahashi, M.1
Kishida, H.2
Miyanaga, A.3
-
22
-
-
77952557856
-
Development of liquid crystal display panel integrated with drivers using amorphous In-Ga-Zn-oxide thin film transistors
-
T. Osada, K. Akimoto, T. Sato et al., "Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In-Ga-Zn-Oxide Thin Film Transistors," Jpn. J. Appl. Phys. 43, 03CC02 (2010).
-
(2010)
Jpn. J. Appl. Phys.
, vol.43
-
-
Osada, T.1
Akimoto, K.2
Sato, T.3
-
23
-
-
77952579176
-
Temperature dependence of transistor characteristics and electronic structure for amorphous In-Ga-Zn-oxide thin film transistor
-
H. Godo, D. Kawae, S. Yoshitomi et al., "Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide Thin Film Transistor," Jpn. J. Appl. Phys. 43, 03CB04 (2010).
-
(2010)
Jpn. J. Appl. Phys.
, vol.43
-
-
Godo, H.1
Kawae, D.2
Yoshitomi, S.3
-
24
-
-
77952579039
-
4.0-inch active-matrix organic light-emitting diode display integrated with driver circuits using amorphous In-Ga-Zn-oxide thin-film transistors with suppressed variation
-
H. Ohara, T. Sasaki, K. Noda et al., "4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In-Ga-Zn-Oxide Thin-Film Transistors with Suppressed Variation," Jpn. J. Appl. Phys. 43, 03CD02, (2010).
-
(2010)
Jpn. J. Appl. Phys.
, vol.43
-
-
Ohara, H.1
Sasaki, T.2
Noda, K.3
-
25
-
-
77954170230
-
Development of 4.0-in. AMOLED display with driver circuit using amorphous In-Ga-Zn-oxide TFTs
-
J. Sakata, H. Ohara, M. Sasaki et al., "Development of 4.0-in. AMOLED Display with Driver Circuit Using Amorphous In-Ga-Zn-Oxide TFTs," IDW'09 Proc., 689-692 (2009).
-
(2009)
IDW'09 Proc.
, pp. 689-692
-
-
Sakata, J.1
Ohara, H.2
Sasaki, M.3
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