Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO 2(100) substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1404-1406

  Liu, Bin ^a   Han, Ping ^a   Xie, Zili ^a   Zhang, Rong ^a   Liu, Chengxiang ^a   Xiu, Xiangqian ^a   Hua, Xuemei ^a   Lu, Hai ^a   Chen, Peng ^a   Zheng, Youdou ^a   Zhou, Shengming ^b  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

Electroluminescence; InGaN GaN; LEDs; MOCVD; Quantum wells; Structure

Indexed keywords

ACTIVE LAYER; ACTIVE REGIONS; BLUE LEDS; ELECTROLUMINESCENCE SPECTRUM; GREEN LIGHT; HIGH RESOLUTION X RAY DIFFRACTION; INGAN/GAN; INJECTION CURRENTS; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MULTIPLE QUANTUM WELLS; NON-POLAR; OUTPUT POWER; P-N JUNCTION; PEAK WAVELENGTH; POLARIZATION FIELD; QUANTUM WELL; QUANTUM WELL INTERFACES; SATELLITE PEAKS; THIRD-ORDER;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954269614     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983571     Document Type: Article

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