Characterization of hydrophobic bonded silicon wafers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 66-70

  Keskitalo, Niclas ^a   Tiensuu, Stefan ^b   Hallén, Anders ^c  

^a ERICSSON RADIO SYSTEMS AB   (Sweden)

^b Dag Hammarskjöldsväg 52 B ^*  (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bonded interface; Deep level; Grain boundary

Indexed keywords

BONDING; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROPHOBICITY; INTERFACES (MATERIALS); IRRADIATION; LEAKAGE CURRENTS; POINT DEFECTS; PROTONS; RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

BONDED INTERFACES;

SILICON WAFERS;

EID: 0036136013     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00879-5     Document Type: Article

References (15)