Miniaturized acceleration sensors with in- plane polarized piezoelectric thin films produced by micromachining

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 58, Issue 11, 2011, Pages 2289-2296

  Shanmugavel, Saravanan ^a   Yao, Kui ^a   Luong, Trung Dung ^a   Oh, Sharon Roslyn ^a   Chen, Yifan ^a   Tan, Chin Yaw ^a   Gaunekar, Ajit ^b   Ng, Peter Hon Yu ^b   Li, Marchy Hing Leung ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b ASM Technology Singapore Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION SENSORS; BEAM THICKNESS; ELECTRICAL OUTPUT; ELECTRODE POSITIONING; ELECTROMECHANICAL CONVERSION; FUNDAMENTAL RESONANCE; HIGH SIGNAL-TO-NOISE RATIO; IN-PLANE; INTERDIGITAL ELECTRODE; MEASUREMENT RESULTS; OUT-OF-PLANE VIBRATIONS; PIEZO-ELECTRIC EFFECTS; PIEZOELECTRIC THIN FILMS; PLZT FILMS; SEISMIC MASS; SILICON ON INSULATOR WAFERS; SOI WAFERS; STRESS AND STRAIN DISTRIBUTION; SUSPENSION BEAMS;

COMPOSITE MICROMECHANICS; FADING (RADIO); FERROELECTRIC FILMS; LEAD; MICROMACHINING; PIEZOELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SIGNAL TO NOISE RATIO; STRAIN; STRUCTURAL DESIGN; THIN FILMS; ZIRCONIUM;

SILICON WAFERS;

ACCELERATION; ACOUSTICS; ARTICLE; ARTIFICIAL MEMBRANE; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MICROELECTROMECHANICAL SYSTEM; TRANSDUCER;

ACCELERATION; ACOUSTICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MEMBRANES, ARTIFICIAL; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; MINIATURIZATION; TRANSDUCERS;

EID: 81355147356     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2011.2086     Document Type: Article

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