Highly uniform step and terrace structures on SiC(0001) surfaces

IBM Journal of Research and Development

Volumn 55, Issue 4, 2011, Pages

  Sun, J ^a   Hannon, J B ^b   Tromp, R M ^b   Pohl, K ^a  

^a University of New Hampshire   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DARK-FIELD; DISILANES; LOW ENERGY ELECTRON MICROSCOPY; STACKING FAULT ENERGIES; TERRACE STRUCTURE;

ATOMIC FORCE MICROSCOPY; SILICON CARBIDE;

CRYSTAL ATOMIC STRUCTURE;

EID: 81255196860     PISSN: 00188646     EISSN: 21518556     Source Type: Journal    
DOI: 10.1147/JRD.2011.2156230     Document Type: Conference Paper

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