Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 2, Issue 12, 2008, Pages 833-837

  Gokcen M ^a   ALTuntas H ^a   Altidal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Dielectric properties; Electrical properties; MOS structures; Oxide thickness; Series resistance

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE;

DIELECTRIC CHARACTERISTICS; DIELECTRIC LOSS TANGENT; ELECTRICAL AND DIELECTRIC PROPERTIES; INTERFACIAL OXIDE LAYERS; MOS STRUCTURE; OXIDE THICKNESS; SERIES RESISTANCE VALUES; SERIES RESISTANCES;

CAPACITANCE;

EID: 69249116251     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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