Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

Current Applied Physics

Volumn 12, Issue 2, 2012, Pages 369-372

  Lee, S R ^a   Kim, H M ^a   Char, K ^a   Jang, J H ^a   Kim, M ^a   Cho, M R ^a   Park, Y D ^a   Jung, R ^b   Kim, D C ^c   Seo, S ^c  

^a Seoul National University   (South Korea)

^b Kwangwoon University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Bipolar resistance switching; Epitaxy; Interface; NiO; Oxygen vacancy

Indexed keywords

DEVICE PERFORMANCE; HIGH RESISTANCE; LOW RESISTANCE; METALLIC CONTACTS; NIO; NIO FILMS; OXYGEN CONTENT; RESISTANCE SWITCHING;

ELECTRODES; ELECTROFORMING; EPITAXIAL FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); OXYGEN; PLATINUM;

OXYGEN VACANCIES;

EID: 81155131059     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.07.033     Document Type: Article

References (23)

1. G.I. Meijer Science 319 2008 1625
2. D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-I. Chung, J.T. Moon, and B.I. Ryu Appl. Phys. Lett. 88 2006 202102
3. K. Fujiwara, T. Nemoto, M.J. Rozenberg, Y. Nakamura, and H. Takagi Jpn. J. Appl. Phys. 47 2008 6266
4. S.H. Chang, J.S. Lee, S.C. Chae, S.B. Lee, C. Liu, B. Kahng, D.-W. Kim, and T.W. Noh Phys. Rev. Lett. 102 2009 26801
5. R. Waser, and M. Aono Nat. Mater. 6 2007 833
6. D.S. Jeong, H. Schroeder, U. Breuer, and R. Waser J. Appl. Phys. 104 2008 123716
7. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, and R.S. Williams Nat. Nanotechnol. 3 2008 429
8. A. Sawa Mater. Today 11 2008 28
9. D.S. Jeong, H. Schroeder, and R. Waser Electrochem. Solid-State Lett. 10 2007 G51
10. S. Seo, M.J. Lee, D.H. Seo, E.J. Jeoung, D.-S. Suh, Y.S. Joung, I.K. Yoo, I.R. Hwang, S.H. Kim, I.S. Byun, J.-S. Kim, J.S. Choi, and B.H. Park Appl. Phys. Lett. 85 2004 5655
11. C.B. Lee, B.S. Kang, A. Benayad, M.J. Lee, S.E. Ahn, K.H. Kim, G. Stefanovich, Y. Park, and I.K. Yoo Appl. Phys. Lett. 93 2008 42115
12. L. Guox, J.G. Lisoni, M. Jurczak, D.J. Wouters, L. Courtade, and C. Muller J. Appl. Phys. 107 2010 24512
13. M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, and B.P. Andreasson Adv. Mater. 19 2007 2232
14. S.R. Lee, K. Char, D.C. Kim, R. Jung, S. Seo, X.S. Li, G.-S. Park, and I.K. Yoo Appl. Phys. Lett. 91 2007 202115
15. S.R. Lee, H.M. Kim, J.H. Bak, Y.D. Park, K. Char, H.W. Park, D.H. Kwon, M. Kim, D.C. Kim, S. Seo, X.-S. Li, G.-S. Park, and R. Jung Jpn. J. Appl. Phys. 49 2010 4
16. G.A. Slack J. Appl. Phys. 31 1960 1571
17. B.D. Cullity, and S.R. Stock Elements of X-ray Diffraction 2001 Prentice-Hall Inc.
18. W. Gong, H. Yun, Y.B. Ning, J.E. Greedan, W.R. Datars, and C.V. Stager J. Solid State Chem. 90 1991 320
19. C.B. Eom, R.J. Cava, R.M. Fleming, Julia M. Philips, R.B. van Dover, J.H. Marshall, J.W.P. Hsu, J.J. Krajewski, and W.F. Peck Jr. Science 258 1992 1766
20. J.J. Yang, F. Miao, M.D. Pickett, D.A.A. Ohlberg, D.R. Stewart, C.N. Lau, and R.S. Williams Nanotechnology 20 2009 215201
21. D.L. Smith Thin-Film Deposition 1997 McGraw-Hill Inc.
22. R. Münstermann, J.J. Yang, J.P. Strachan, G. Medeiros-Ribeiro, R. Dittmann, and R. Waser Phys. Status Solidi (RRL) 4 2010 16
23. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C.S. Hwang Nat. Nanotechnol. 5 2010 148