SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 43, Issue 13, 2011, Pages 1632-1635

Application of Cr Kα X-ray photoelectron spectroscopy system to overlayer thickness determination

(5) Kobata, Masaaki a Píš, Igor b Nohira, Hiroshi c Iwai, Hideo a Kobayashi, Keisuke a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b CHARLES UNIVERSITY (Czech Republic)

c TOKYO CITY UNIVERSITY (Japan)

Author keywords

angle dependent measurement; attenuation lengths; Cr K ; thickness determination; XPS

Indexed keywords

ACCEPTANCE ANGLE; ANGLE DEPENDENCE; ANGLE-DEPENDENT MEASUREMENT; ATTENUATION LENGTHS; GATE STACKS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HEMISPHERICAL ANALYZERS; HIGH ENERGY; HIGH-PRECISION; INFORMATION DEPTH; OBJECTIVE LENS; OVERLAYERS; PHOTOELECTRON DIFFRACTION; PHOTOEMISSION INTENSITY; SAMPLE ROTATION; SAMPLE SETS; SI(0 0 1); THICKNESS DETERMINATION; THICKNESS VALUE;

DEPTH PROFILING; ELECTRONS; EMISSION SPECTROSCOPY; HAFNIUM OXIDES; IRIDIUM; PHOTOELECTRICITY; PHOTONS; SILICON COMPOUNDS; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 80955137630 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.3760 Document Type: Article

Times cited : (8)

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