Hard-x-ray photoelectron diffraction from Si(001) covered by a 0-7-nm-thick SiO2 layer

Applied Physics Express

Volumn 3, Issue 5, 2010, Pages

  Píš, Igor ^a,b   Kobata, Masaaki ^b   Matsushita, Tomohiro ^c   Nohira, Hiroshi ^d   Kobayashi, Keisuke ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED PHOTOELECTRON; ATOMIC STRUCTURE; ATOMIC SURFACES; BURIED LAYER; CLUSTER MODELS; HARD X RAY; INFORMATION DEPTH; MEASURED RESULTS; NEW MATERIAL; SI(0 0 1); X RAY PHOTO-ELECTRON DIFFRACTION;

CHROMIUM; COMPUTER SIMULATION; PHOTOIONIZATION; PHOTONS; SILICON; SILICON COMPOUNDS; SURFACE STRUCTURE;

CRYSTAL ATOMIC STRUCTURE;

EID: 77952758867     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.056701     Document Type: Article

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