Effect of oxide charge trapping on X-ray photoelectron spectroscopy of HfO2/SiO2/Si Structures

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Abe, Yasuhiro ^a   Miyata, Noriyuki ^a,b   Ikenaga, Eiji ^c   Suzuki, Haruhiko ^a   Kitamura, Koji ^a   Igarashi, Satoru ^a   Nohira, Hiroshi ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED XPS; CHEMICAL BONDING STATE; CHEMICAL COMPOSITIONS; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; METAL LAYER; NEGATIVE CHARGE; OXIDE CHARGE TRAPPING; PHOTOELECTRON PEAKS; PHOTOELECTRON SPECTRUM; POSITIVE CHARGES; POTENTIAL VARIATIONS; SI OXIDE; SURFACE METAL LAYERS;

BINDING ENERGY; BINDING SITES; CHARGE TRAPPING; CHEMICAL BONDS; EMISSION SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; INTERFACIAL ENERGY; METALS; MONOLAYERS; NUCLEAR ENERGY; PHOTOELECTRICITY; PHOTOELECTRONS; PHOTOIONIZATION; PHOTONS; POTENTIAL ENERGY; SILICON; SILICON COMPOUNDS; STRUCTURAL METALS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67849121397     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.041201     Document Type: Article

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