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Volumn , Issue , 2005, Pages 1273-1276

Study of direct PECVD sin X-induced surface emitter and bulk defect passivation in P-type silicon solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; EMITTER SURFACES;

EID: 27944459743     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (13)
  • 3
    • 0028708357 scopus 로고
    • Silicon surface and bulk defect passivation by low temperature PECVD oxides and nitrides
    • Hawaii
    • Z. Chen, A. Rohatgi, and D. Ruby. "Silicon Surface and Bulk Defect Passivation by Low Temperature PECVD Oxides and Nitrides", 1st World Conference on Photovoltaic Energy Conversion, Hawaii, (1994), pp. 1331-1334.
    • (1994) 1st World Conference on Photovoltaic Energy Conversion , pp. 1331-1334
    • Chen, Z.1    Rohatgi, A.2    Ruby, D.3
  • 4
    • 0035199111 scopus 로고    scopus 로고
    • Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
    • J. Schmidt and M. J. Kerr, "Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride", Sol. En. Mat. and Sol. Cells, 65, (2001), pp. 585-591.
    • (2001) Sol. En. Mat. and Sol. Cells , vol.65 , pp. 585-591
    • Schmidt, J.1    Kerr, M.J.2
  • 6
    • 0342849963 scopus 로고    scopus 로고
    • Comparison of remote versus direct PECVD silicon nitride passivation of phosphorus diffused emitters of silicon solar cells
    • Vienna
    • B. Lenkeit, T. Lauinger, A. G. Aberle, and R. Hezel, "Comparison of Remote Versus Direct PECVD Silicon Nitride Passivation of Phosphorus Diffused Emitters of Silicon Solar Cells", 2nd World Conference on Photovoltaic Energy Conversion, Vienna, (1998), pp. 1434-1437.
    • (1998) 2nd World Conference on Photovoltaic Energy Conversion , pp. 1434-1437
    • Lenkeit, B.1    Lauinger, T.2    Aberle, A.G.3    Hezel, R.4
  • 8
    • 5244379910 scopus 로고    scopus 로고
    • Optimization of saturation current density of PECVD SiN coated phosphorus diffused emitters using neural network modelling
    • L. Cai, S. Han, G. May, S. Kamra, T. Krygowski, and A. Rohatgi, "Optimization of saturation current density of PECVD SiN coated phosphorus diffused emitters using neural network modelling", Journal of Electronic Materials, 25 (11), 1784, (1996).
    • (1996) Journal of Electronic Materials , vol.25 , Issue.11 , pp. 1784
    • Cai, L.1    Han, S.2    May, G.3    Kamra, S.4    Krygowski, T.5    Rohatgi, A.6
  • 11
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data,", Applied Physics Letters 69, 3510(1996)
    • (1996) Applied Physics Letters , vol.69 , pp. 3510
    • Sinton, R.A.1    Cuevas, A.2
  • 12
    • 0035307668 scopus 로고    scopus 로고
    • Surface recombination velocity of phosphorous-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
    • M. J. Kerr, J. Schmidt, A. Cuevas and J. H. Bultman, "Surface recombination velocity of phosphorous-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide", Journal of applied physics, 89, 3821 (2001).
    • (2001) Journal of Applied Physics , vol.89 , pp. 3821
    • Kerr, M.J.1    Schmidt, J.2    Cuevas, A.3    Bultman, J.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.