Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 866-870

  Bruncko, J ^a   Vincze, A ^a   Netrvalova, M ^b   Sutta P ^b   Hasko, D ^a   Michalka, M ^a  

^a INTERNATIONAL LASER CENTER   (Slovakia)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

Amorphous structure; Annealing; Cryogenic temperature; Pulsed laser deposition; Recrystallization; Zinc oxide

Indexed keywords

AMORPHOUS STRUCTURES; AMORPHOUS ZNO; AS-DEPOSITED FILMS; CRYOGENIC CONDITIONS; CRYOGENIC TEMPERATURE; FINE GRAINED; HEXAGONAL WURTZITE STRUCTURE; IN-DEPTH INVESTIGATION; INNER STRUCTURE; POLYCRYSTALLINE; RECRYSTALLIZATION TEMPERATURES; RECRYSTALLIZATIONS; SECONDARY ION MASS SPECTROSCOPY; SUBSTRATE HOLDERS; TRANSITION PROCESS; ZNO FILMS; ZNO THIN FILM;

AMORPHOUS MATERIALS; ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYOGENICS; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; DIFFRACTION; LIQUID NITROGEN; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; RECRYSTALLIZATION (METALLURGY); SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE; ZINC SULFIDE;

AMORPHOUS FILMS;

EID: 80755132225     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.202     Document Type: Conference Paper

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