GaN single-polarity power supply bootstrapped comparator for high-temperature electronics

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 27-29

  Liu, Xiaosen ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN HEMT; bootstrapped comparator; enhancement mode operation; monolithic integration of E D mode HEMT

Indexed keywords

ALGAN/GAN HEMTS; BOOTSTRAPPED COMPARATOR; ENHANCEMENT-MODE; HIGH-TEMPERATURE ELECTRONICS; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; POWER SUPPLY; ROOM TEMPERATURE; TAIL CURRENT SOURCE; UNITY-GAIN BANDWIDTH; VOLTAGE GAIN;

ELECTRIC POWER SUPPLIES TO APPARATUS; GAIN MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; MONOLITHIC INTEGRATED CIRCUITS;

COMPARATORS (OPTICAL);

EID: 78650921896     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2088376     Document Type: Conference Paper

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