Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 15, 2011, Pages

  Huang, Bing ^a   Xu, Qiang ^a   Wei, Su Huai ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80455149664     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.155406     Document Type: Article

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