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Physical Review Letters

Volumn 103, Issue 11, 2009, Pages

Understanding the clean interface between covalent si and ionic Al2O3

(4) Xiang, H J a Da Silva, Juarez L F a Branz, Howard M a Wei, Su Huai a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT INTERFACE MODELS; BAND GAPS; BASIN HOPPING; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; HETERO INTERFACES; SEMICONDUCTOR-OXIDE INTERFACE; SI ATOMS;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 70249133307 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.103.116101 Document Type: Article

Times cited : (20)

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