Growth of Al2O3 nanowires on the Cu-9 at.%Al(111) single crystal surface

Journal of the American Ceramic Society

Volumn 94, Issue 11, 2011, Pages 4084-4088

  Matolínová, Iva ^a   Nemšák, Slavomír ^b   Cabala, Miloš ^a   Tsud, Nataliya ^a   Poltierová Vejpravová, Jana ^a   Veltruská, Kater̂ina ^a   Yoshitake, Michiko ^b   Matolín, Vladimír ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA LAYERS; ALUMINA NANOSTRUCTURES; ALUMINA PHASE; ALUMINUM OXIDES; ATOM SEGREGATION; CHEMICAL COMPOSITIONS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EPITAXIAL THIN FILMS; GROWTH MODES; LOW PRESSURES; NANOWIRE GROWTH; OXIDE STRUCTURES; STRUCTURE CHARACTERIZATION; SUBSTRATE ANNEALING; SUBSTRATE SURFACE; TEMPERATURE DEPENDENCE;

ALUMINA; ALUMINUM; DIFFRACTIVE OPTICS; ENERGY DISPERSIVE SPECTROSCOPY; NANOWIRES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE SEGREGATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 80155209686     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04704.x     Document Type: Article

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